PART |
Description |
Maker |
KMM5364005CSW KMM5364005CSWG |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
SAMSUNG[Samsung semiconductor]
|
GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM 8ns 1M x 4 4Mb asynchronous SRAM 12ns 1M x 4 4Mb asynchronous SRAM
|
http:// GSI Technology
|
GS74116U-8 GS74116J-10I GS74116TP-12I |
8ns 256K x 16 4Mb asynchronous SRAM 10ns 256K x 16 4Mb asynchronous SRAM 12ns 256K x 16 4Mb asynchronous SRAM
|
GSI Technology
|
GS842Z18AB-166 GS842Z18AB-166I GS842Z18AB-180 GS84 |
4Mb NBT SRAMs 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
M58CR064-ZBT M58CR064Q90ZB6T M58CR064CZB M58CR064D |
64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory 64兆位4Mb的16,双行,突发1.8V电源快闪记忆 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory 64 MBIT (4MB X16, DUAL BANK, BURST) 1.8V SUPPLY FLASH MEMORY 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
|
STMicroelectronics N.V. 意法半导 ST Microelectronics
|
IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM) 4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的(128K的36)的SRAMMb的(128K的36)寄存器锁存模式的同步的CMOS静态RAM)的
|
IBM Microeletronics International Business Machines, Corp.
|
GS74108AGX-12I GS74108AJ-12I GS74108AJ-10I GS74108 |
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PBGA48 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO44 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO36
|
SRAM GSI Technology, Inc.
|
M27V320-150N6 M27V320 M27V320-100M1 M27V320-100M6 |
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-SSOP -40 to 85 32兆位4Mb的x8或检察官办公室的2Mb x16存储 2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-TVSOP -40 to 85 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM 32 MBIT (4MB X8 OR 2MB X16) OTP EPROM
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
ID245E01 |
4MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
|
EDI2GG464128V EDI2GG464128V10D EDI2GG464128V11D ED |
4MB SYNCHRONOUS CARD EDGE DIMM
|
White Electronic Designs Corporation
|